DARPA (MTO): Ultra-Wide BandGap Semiconductors (UWBGS)
| קרן | US Department of Defense |
|---|---|
| מדינה | U.S.A. |
| סוג | Research Grants |
| תאריך אחרון | 15/12/2023 |
| פקולטה | Engineering, Exact Sciences |
| תיאור | The UWBGS program will develop foundational, high-quality ultra-wide bandgap (UWBG) materials and electrical contacts necessary for realization of practical electronics that enable UWBG applications. TA1: substrate development area TA2: UWBG device layers and electrical contacts
Funding: no fixed limit Duration: 3 years
Research Authority due date: 25.10.23 Abstract (strongly encouraged) due date: 1.11.23 Full proposal due date: 15.12.23 |
| קבצים מצורפים | |
| קישור | לאתר |
| עדכון אחרון | עדכון אחרון: 09/10/2023 |
