DARPA (MTO): ELectronics for G-band ARrays (ELGAR)
קרן | US Department of Defense |
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מדינה | U.S.A. |
סוג | Research Grants |
תאריך אחרון | 13/12/2021 |
פקולטה | Engineering, Exact Sciences |
תיאור |
The ELGAR program seeks to develop integration technologies needed to create compact, high performance III-V RF electronics to enable communication and sensing systems at G-band frequencies. These integration technologies include dense, silicon-like, on-chip BEOL and lowloss
chip-to-chip interconnects.
Technical Challenge 1: Achieving efficient, compact G-band MMICs with high output power density Technical Challenge 2: Achieving low-loss off-chip interconnects between adjacent G-band array components Funding: no fixed limit
Duration: 4 years
Research Authority due date: 24.10.21
Abstract (strongly encouraged) due date: 29.10.21
Full proposal due date: 13.12.21
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קבצים מצורפים | |
קישור | לאתר |
עדכון אחרון | עדכון אחרון: 11/10/2021 |