Army research Office (ARL- ARO): Highly Stable High Fidelity Trapped Ion Systems
קרן | US Department of Defense |
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מדינה | U.S.A. |
סוג | Research Grants |
תאריך אחרון | 16/08/2019 |
פקולטה | Engineering, Exact Sciences |
תיאור | This BAA has three research goals (a) substantially reduce noise levels detrimental to high fidelity gates in trapped ion systems and to improve the stability of these gates once achieved (b) explore novel quantum information encoding schemes and/or entanglement generation schemes with trapped ion systems (c) development of critical supporting technology required for successful highly stable high fidelity trapped ion systems. Funding: $1,500,000 total for topics A, B $500,000 for topic C
Duration: 3 years
Research Authority due date: 4.6.19
White paper (highly encouraged) due date: 11.6.19
Full proposal due date: 16.8.19
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קבצים מצורפים | |
קישור | לאתר |
עדכון אחרון | עדכון אחרון: 30/04/2019 |