Army research Office (ARL- ARO): Highly Stable High Fidelity Trapped Ion Systems

קרןUS Department of Defense
מדינהU.S.A.
סוגResearch Grants
תאריך אחרון16/08/2019
פקולטהEngineering, Exact Sciences
תיאור

This BAA has three research goals

(a) substantially reduce noise levels detrimental to high fidelity gates in trapped ion systems and to improve the stability of these gates once achieved

(b) explore novel quantum information encoding schemes and/or entanglement generation schemes with trapped ion systems

(c) development of critical supporting technology required for successful highly stable high fidelity trapped ion systems.

 
 
 
Funding: $1,500,000 total for topics A, B $500,000 for topic C
 
Duration: 3 years 
 
 
 
Research Authority due date: 4.6.19
White paper (highly encouraged)  due date: 11.6.19
Full proposal due date: 16.8.19
קבצים מצורפים
קישורלאתר
עדכון אחרוןעדכון אחרון: 30/04/2019
אוניברסיטת תל-אביב, ת.ד. 39040, תל-אביב 6997801
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